APTGT100DH170 APTGT100DH170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 150 i c continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 200 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 560 w rbsoa reverse bias safe operating area t j = 125c 200a @ 1600v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. vbus out2 cr3 0/vbus e4 q4 g4 out1 cr2 q1 g1 e1 g4 e4 vbus g1 e1 0/vbus out2 out1 v ces = 1700v i c = 100a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? switched reluctance motor drives features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile asymmetrical - bridge trench + field stop igbt ? powe r m odule
APTGT100DH170 APTGT100DH170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 350 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 100a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 500 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 9 c oes output capacitance 0.36 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.3 nf t d(on) tur n-o n delay ti me 370 t r rise time 40 t d(off) turn-off delay time 650 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 100a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise time 50 t d(off) turn-off delay time 800 t f fall time 300 ns e on turn-on switching energy 32 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 900v i c = 100a r g = 4.7 ? 31 mj diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 350 i rm maximum reverse leakage current v r =1700v t j = 125c 600 a i f(a v) maximum average forward current 50% duty cycle tc = 80c 100 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 100a t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 28 q rr reverse recovery charge i f = 100a v r = 900v di/dt =1600a/s t j = 125c 46 c
APTGT100DH170 APTGT100DH170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.22 r thjc junction to case diode 0.39 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 3400 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g package outline (dimensions in mm)
APTGT100DH170 APTGT100DH170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 25 50 75 100 125 150 175 200 00.511.522.533.54 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 40 80 120 160 200 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 5 6 7 8 9 10 11 12 13 v ge (v) i c (a) energy losses vs collector current eon eoff er er 0 20 40 60 80 100 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 900v v ge = 15v r g = 4.7 ? t j = 125c eo n eo ff er 0 12.5 25 37.5 50 62.5 75 87.5 100 0 5 10 15 20 25 30 35 40 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 100a t j = 125c switching energy losses vs gate resistanc e reverse bias safe operating area 0 50 100 150 200 250 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT100DH170 APTGT100DH170 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 00.511.522.53 v f (v) i c (a) hard switching zcs zv s 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =4.7 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0. 05 0.1 0. 15 0.2 0. 25 0.3 0. 35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c /w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
|
